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                用于平面钙钛矿太阳能电池的由气相生长MAPbI3−xClx制备的原子层沉积TiO2

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                Atomic-layer-deposited TiO2 with vapor-grown MAPbI3−xClx for planar perovskite solar cells
                用于平面钙钛矿太阳能电池的由气相生长MAPbI3−xClx制备的原子层沉积TiO2

                Journal of Vacuum Science & Technology A 37, 010902 (2019);



                Sungjae Na1, Sayah Lee2, Won-Gyu Choi1, Chan-Gyu Park1, Sang Ouk Ryu2,a), and Taeho Moon1,b)
                Hide Affiliations
                1Department of Materials Science and Engineering, Dankook University, Cheonan 31116, South Korea
                2Department of Electronics and Electrical Engineering, Dankook University, Yongin 16890, South Korea
                a)Electronic mail: ryuso@dankook.ac.kr
                b)Electronic mail: taehom@dankook.ac.kr

                ABSTRACT
                摘要

                TiO2 thin films as electron-transporting layers for planar-type perovskite solar cells were prepared by atomic layer deposition (ALD). Perovskite MAPbI3−xClx thin films were formed on the ALD TiO2 by sequential vapor processing. The resulting perovskitethin films were uniform and pinhole-free, with an average grain size of ~370 nm. The high crystallinity of the perovskite layers was also confirmed, with an optical bandgap of ~1.58 eV. Planar n-i-psolar cells were formed using the ALD TiO2 and vapor-grown perovskite. The deposition temperature and thickness of the ALD TiO2 were optimized, resulting in a superior efficiency of ~11.6% compared to conventional TiO2.

                        通过原子层沉积(ALD)制备了作为平面型钙钛矿太阳能电池的电子传输层的TiO2薄膜。通过顺序蒸放心吧汽处理在ALD TiO2上】形成钙钛矿MAPbI3−xClx薄膜。所得到的钙钛矿薄膜均匀且无针孔,平均晶粒尺寸⊙为~370nm。还证实了钙钛矿层的高结晶度,光学带隙为~1.58eV。使用ALD TiO2和气相生长的钙钛矿形成平面n-i-p型太阳能电池。优化了ALD TiO2的沉积温度和厚但你度,与常规TiO2相比,其效率更高,可达~11.6%


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